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AON6450L N-Channel SDMOS TM Power Transistor General Description Product Summary Parameter 100V ID (at VGS=10V) 52A RDS(ON) (at VGS=10V) < 14.5m Ω RDS(ON) (at VGS = 7V) < 17.5m Ω 100% UIS Tested! - RoHS Compliant 100% R g Tested! - Halogen Free Symbol VDS VGS IDM IAR EAR TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJC Maximum Junction-to-Case °C/W °C/W Maximum Junction-to-Ambient A D 1 55 1.5 Power Dissipation B PD W Power Dissipation A PDSM W TA=70°C 83 1.4 TA=25°C A TA=25°C IDSM A TA=70°C ID 52 33 TC=25°C TC=100°C Repetitive avalanche energy L=0.1mH C mJ Avalanche Current C 7 Continuous Drain Current 84 9 A 41 The AON6450L is fabricated with SDMOS TM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS V Maximum Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted V ±25 Gate-Source Voltage Drain-Source Voltage 100 Units Maximum Junction-to-Ambient A °C/W RθJA 14 40 17 Junction and Storage Temperature Range -55 to 150 °C Thermal Characteristics 110 Pulsed Drain Current C Continuous Drain Current Parameter Typ Max TC=25°C 2.3 33 TC=100°C G D S Top View DFN5X6 Fits SOIC8 footprint ! Rev 0: January 2009 www.aosmd.com Page 1 of 7 |
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