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AO3705L Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AO3705L Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 5 page  Symbol Units VDS V VGS V TA=25°C TA=70°C IDM VKA V TA=25°C TA=70°C IFM TA=25°C TA=70°C TJ, TSTG °C Symbol Units RθJL RθJL Parameter MOSFET Schottky Drain-Source Voltage -20 Absolute Maximum Ratings TA=25°C unless otherwise noted Gate-Source Voltage ±8 A -2.5 Pulsed Drain Current B -25 Continuous Drain Current A ID -3.2 Schottky reverse voltage 20 A 0.5 Pulsed Forward Current B 10 Continuous Forward Current A IF 1 W 0.7 0.42 Junction and Storage Temperature Range Power Dissipation PD 1.15 0.66 -55 to 150 Parameter: Thermal Characteristics MOSFET Typ Max Maximum Junction-to-Ambient A t ≤ 10s RθJA 80.3 110 °C/W Maximum Junction-to-Ambient A Steady-State 117 150 Maximum Junction-to-Lead C Steady-State 43 80 Thermal Characteristics Schottky Maximum Junction-to-Ambient A t ≤ 10s RθJA 153 190 °C/W Maximum Junction-to-Ambient A Steady-State 173 220 Maximum Junction-to-Lead C Steady-State 103 140 AO3705 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode Features VDS (V) = -20V ID = -3.2A (VGS = -4.5V) RDS(ON) < 70mΩ (VGS = -4.5V) RDS(ON) < 90mΩ (VGS = -2.5V) RDS(ON) < 110mΩ (VGS = -1.8V) RDS(ON) < 130mΩ (VGS = -1.5V) SCHOTTKY VDS (V) = 20V, IF = 1A, VF<0.45V@1A General Description The AO3705/L uses advanced trench technology to provide excellent RDS(ON), low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for buck convertor applications. AO3705 and AO3705L are electrically identical. -RoHs Complaint -AO3705L is Halogen Free A K SOT-23-5 Top View 1 2 3 5 4 G S A D K G D S Alpha Omega Semiconductor, Ltd. www.aosmd.com |
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Similar Description - AO3705L |
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