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AO7414L Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AO7414L Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 4 page  AO7414 Symbol Min Typ Max Units BVDSS 20 V 1 TJ=55°C 5 IGSS ±100 nA VGS(th) 0.5 0.68 1 V ID(ON) 25 A 50 62 TJ=125°C 70 90 56 70 m Ω 66 85 gFS 15 S VSD 0.7 1 V IS 0.35 A Ciss 260 320 pF Coss 48 pF Crss 27 pF Rg 3 4.5 Ω Qg 2.9 3.8 nC Qgs 0.4 nC Qgd 0.6 nC tD(on) 2.5 ns tr 3.2 ns tD(off) 21 ns tf 3ns trr 14 19 ns Qrr 3.4 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V Gate Threshold Voltage VDS=VGS ID=250µA µA Gate-Body leakage current VDS=0V, VGS=±8V RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=2A m Ω VGS=2.5V, ID=1.8A VGS=1.8V, ID=1A Forward Transconductance VDS=5V, ID=2A Diode Forward Voltage IS=1A,VGS=0V Gate Drain Charge Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance VGS=0V, VDS=10V, f=1MHz Output Capacitance Reverse Transfer Capacitance Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/µs Turn-On DelayTime VGS=4.5V, VDS=10V, RL=5Ω, RGEN=6Ω Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=4.5V, VDS=5V On state drain current Body Diode Reverse Recovery Time IF=2A, dI/dt=100A/µs Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge VGS=4.5V, VDS=10V, ID=2A Gate Source Charge A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev1: March 2008 Alpha Omega Semiconductor, Ltd. www.aosmd.com |
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