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AO4490L Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AO4490L Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
1 / 5 page Symbol VDS VGS IDM IAR EAR TJ, TSTG Symbol Typ Max 32 45 62 75 RθJL 18 24 A Repetitive avalanche energy L=0.3mH G 135 mJ Maximum Junction-to-Lead C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s RθJA °C/W °C/W Absolute Maximum Ratings TA=25°C unless otherwise noted V V ±20 Pulsed Drain Current B Power Dissipation TA=25°C Gate-Source Voltage Drain-Source Voltage Maximum Junction-to-Ambient A Steady-State 16 13 120 Avalanche Current G 30 Continuous Drain Current AF Maximum Units Parameter TA=25°C TA=70°C 30 W Junction and Storage Temperature Range A PD °C 2.8 1.8 -55 to 150 TA=70°C ID AO4490 N-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = 30V ID = 16A (VGS = 10V) RDS(ON) < 7.2mΩ (VGS = 10V) RDS(ON) < 10mΩ (VGS = 4.5V) ESD protected UIS Tested! Rg, Ciss,Coss,Crss Tested General Description The AO4490/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V, while retaining a 20V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a load switch and general purpose applications. AO4490 and AO4490L are electrically identical. -RoHS Compliant -AO4490L is Halogen Free SOIC-8 G S S S D D D D G D S Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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