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2SD1027 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1027 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1027 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A, IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A ,IB= 30mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A ,IB= 30mA 2.0 V ICBO Collector Cutoff current VCB= 200V, IE= 0 0.1 mA ICEO Collector Cutoff current VCE= 200V, IB= 0 B 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 5 mA fT Current-Gain—Bandwidth Product IC= 1.5A ; VCE= 10V 20 MHz hFE DC Current Gain IC= 10A ; VCE= 3V 1500 Switching Times ton Turn-On Time 2.0 μs tstg Storage Time 8.0 μs tf Fall Time IC = 10A,IB1 = -IB2= 30mA; RL= 3Ω;VBB2= 4V 5.0 μs isc Website：www.iscsemi.cn |
Similar Part No. - 2SD1027 |
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Similar Description - 2SD1027 |
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