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BUH315D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUH315D Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUH315D DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Integrated Diode APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 12 A IB B Base Current 3 A IBM Base Current-Peak 5 A PC Collector Power Dissipation @TC=25℃ 44 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.8 ℃/W isc Website:www.iscsemi.cn |
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