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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1288 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,RBE=∞ -60 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-1.5A; IB=-75mA -0.4 V ICBO Collector cut-off current VCB=-40V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -100 μA hFE DC current gain IC=-0.5A ; VCE=-2V 70 280 fT Transition frequency IC=-0.5A ; VCE=-5V 100 MHz hFE Classifications Q R S 70-140 100-200 140-280 2 |
