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2SA653 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA653 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA653 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -120 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -150 V VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -1.5 V VBEsat Base-emitter saturation voltage IC=-0.5A; IB=-50mA -2.0 V ICBO Collector cut-off current VCB=-150V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE DC current gain IC=-0.2A ; VCE=-5V 40 fT Transition frequency IC=-0.1A ; VCE=-10V 15 MHz 2 |
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