BUV27AF datasheet(1/2 Pages) ISC

Part #	BUV27AF

Description	isc Silicon NPN Power Transistors

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

BUV27F/AF

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 120V(Min)- BUV27F

150V(Min)- BUV27AF

·High Switching Speed

APPLICATIONS

·Designed for fast switching applications such as high

frequency and efficiency converters, switching regulators

and motor control.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BUV27F

240

VCES

Collector-Emitter Voltage

VBE= 0

BUV27AF

300

V

BUV27F

120

VCEO

Collector-Emitter Voltage

BUV27AF

150

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

15

A

ICM

Collector Current-Peak

20

A

IB

B

Base Current-Continuous

4

A

IBM

Base Current-Peak

6

A

PC

Collector Power Dissipation

@ TC=25℃

18

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

7.0

℃/W

Rth j-a

Thermal Resistance, Junction to Ambient

55

℃/W

isc Website：www.iscsemi.cn

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