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2SA699A Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA699A Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 5 page  Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA699 2SA699A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -0.4 -1.0 V VBEsat Base-emitter saturation voltage IC=-2A ;IB=-0.2 A B -1.5 V 2SA699 -40 V(BR)CBO Collector-base breakdown voltage 2SA699A IC=-1mA;IE=0 -50 V 2SA699 -32 V(BR)CEO Collector-emitter breakdown voltage 2SA699A IC=-10mA; IB=0 -40 V ICBO Collector cut-off current VCB=-20V; IE=0 -1 μA ICEO Collector cut-off current VCE=-12V; IB=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE DC current gain IC=-1A ; VCE=-5V 50 220 COB Output capacitance IE=0; VCB=-5V;f=1MHz 70 pF fT Transition frequency IE=0.5A ; VCB=-5V 150 MHz hFE classifications P Q R 50-100 80-160 100-220 2 |
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