A u t o m o t i ve S upp l e m e nt

7

Symbol

Parameter

Conditions

Units

Min.

Typ.

Max.

Output High Voltage

3.3V I/O, High Drive (OB33P)

3.3V I/O, Low Drive (OB33L)

0.9

2.4

0.9

∗V

DDP

2.4

V

Output Low Voltage

3.3V I/O, High Drive (OB33P)

3.3V I/O, Low Drive (OB33L)

0.4

0.7

0.4

0.7

V

Input High Voltage

3.3V LVTTL/LVCMOS

2

V

Input Low Voltage

3.3V LVTTL/LVCMOS

–0.3

0.8

V

Pull-up

Resistance

(IOB33U)

7

43

k

Ω

Pull-up

Resistance

(IOB25U)

7

43

k

Ω

Input Current

–300

–40

µA

–50

50

µA

Quiescent Supply Current

(standby)

DD

5.0

20

mA

Tristate

Output

Leakage

Current

–10

10

µA

Output Short Circuit Current

High

3.3V High Drive (OB33P)

3.3V Low Drive (OB33L)

–200

–100

mA

Output Short Circuit Current

Low

3.3V High Drive

3.3V Low Drive

200

100

mA

I/O Pad Capacitance

10

pF

Clock Input Pad Capacitance

10

pF

Notes:

1. All process conditions. Junction Temperature: –40 to +125°C.

2. No pull-up resistor.