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RT54SX72S-1CQ256B Datasheet(PDF) 7 Page - Actel Corporation |
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RT54SX72S-1CQ256B Datasheet(HTML) 7 Page - Actel Corporation |
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7 / 84 page  RTSX-S RadTolerant FPGAs v2.2 1-1 General Description RTSX-S RadTolerant FPGAs are enhanced versions of Actel’s SX-A family of devices, specifically designed for enhanced radiation performance. Featuring SEU-hardened D-type flip-flops that offer the benefits of Triple Module Redundancy (TMR) without the associated overhead, the RTSX-S family is a unique product offering for space applications. Manufactured using 0.25 µm technology at the Matsushita (MEC) facility in Japan, RTSX-S offers levels of radiation survivability far in excess of typical CMOS devices. Device Architecture Actel's RTSX-S architecture, derived from the highly successful SX-A sea-of-modules architecture, has been designed to improve upset and total-dose performance in radiation environments. With three layers of metal interconnect in the RT54SX32S and four metal layers in RT54SX72S, the RTSX-S family provides efficient use of silicon by locating the routing interconnect resources between the top two metal layers. This completely eliminates the channels of routing and interconnect resources between logic modules as found in traditional FPGAs. In a sea-of-modules architecture, the entire floor of the FPGA is covered with a grid of logic modules with virtually no chip area lost to interconnect elements or routing. The RTSX-S architecture adds several enhancements over the SX-A architecture to improve its performance in radiation environments, such as SEU-hardened flip-flops, wider clock lines, and stronger clock drivers. Programmable Interconnect Element Interconnection between logic modules is achieved using Actel’s patented metal-to-metal programmable antifuse interconnect elements. The antifuses are normally open circuit and form a permanent, low-impedance connection when programmed. The metal-to-metal antifuse is made up of a combination of amorphous silicon and dielectric material with barrier metals and has a programmed (“on” state) resistance of 25 Ω with capacitance of 1.0 fF for low signal impedance (Figure 1-1). Figure 1-1 • RTSX-S Family Interconnect Elements Silicon Substrate Metal 4 Metal 3 Metal 2 Metal 1 Amorphous Silicon/ Dielectric Antifuse Tungsten Plug Via Tungsten Plug Via Tungsten Plug Contact Routing Tracks |
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