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BPV10 Datasheet(PDF) 1 Page - Vishay Siliconix |
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BPV10 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Document Number: 81502 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com Rev. 1.7, 07-Apr-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Silicon PIN Photodiode, RoHS Compliant BPV10 Vishay Semiconductors DESCRIPTION BPV10 is a PIN photodiode with high speed and high radiant sensitivity in clear, T-1¾ plastic package. It is sensitive to visible and near infrared radiation. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Radiant sensitive area (in mm2): 0.78 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • High bandwidth: 250 MHz at VR = 12 V • Fast response times • Angle of half sensitivity: = ± 20° • Compliant to RoHS Directive 2002/95/EC and in accordance with WEEE 2002/96/EC APPLICATIONS • High speed photo detector Note • Test condition see table “Basic Characteristics” Note • MOQ: minimum order quantity 94 8390 PRODUCT SUMMARY COMPONENT Ira (mA) (deg) 0.1 (nm) BPV10 70 ± 20 380 to 1100 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPV10 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 60 V Power dissipation Tamb 25 °C PV 215 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature t 5 s, 2 mm from body Tsd 260 °C Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 RthJA 350 K/W |
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