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2SA1185 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1185 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1185 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-0.1A ;IB=0 -50 V VCEsat Collector-emitter saturation voltage IC=-7A; IB=-0.7A -0.8 V VBE Base-emitter on voltage IC=-7A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-50V; IE=0 -1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -2 mA hFE-1 DC current gain IC=-1A ; VCE=-5V 60 320 hFE-2 DC current gain IC=-7A ; VCE=-5V 20 Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 250 pF fT Transition frequency IC=-0.5A ; VCE=-5V 100 MHz hFE-1 Classifications Q P O 60-120 100-200 160-320 2 |
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