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2SA1262 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1262 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1262 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0 -60 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -0.6 V ICBO Collector cut-off current VCB=-60V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -100 μA hFE DC current gain IC=-1A ; VCE=-4V 40 fT Transition frequency IE=0.2A ; VCE=-12V 15 MHz Cob Output capacitance IE=0 ; VCB=-10V ;f=1MHz 90 pF Switching times ton Turn-on time 0.25 μs ts Storage time 0.75 μs tf Fall time IC=-2A ;IB1=- IB2=-0.2A RL=10Ω;VCC=-20V 0.25 μs 2 |
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