BFG93A datasheet(2/4 Pages) VISHAY

Part #	BFG93A

Description	Silicon NPN Planar RF Transistor

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Manufacturer	VISHAY [Vishay Siliconix]

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BFG93A

Vishay Telefunken

www.vishay.de

• FaxBack +1-408-970-5600

Rev. 1, 11-Nov-99

2 (4)

Document Number 85076

Electrical DC Characteristics

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Symbol

Min

Typ

Max Unit

Collector cut-off current

VCE = 20 V, VBE = 0

ICES

100

mA

Collector-base cut-off current

VCB = 15 V, IE = 0

ICBO

100

nA

Emitter-base cut-off current

VEB = 2 V, IC = 0

IEBO

10

mA

Collector-emitter breakdown voltage IC = 1 mA, IB = 0

V(BR)CEO

12

V

Collector-emitter saturation voltage

IC = 50 mA, IB = 5 mA

VCEsat

0.1

0.4

V

DC forward current transfer ratio

VCE = 5 V, IC = 30 mA

hFE

40

90

150

Electrical AC Characteristics

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

Transition frequency

VCE = 5 V, IC = 30 mA, f = 500 MHz

fT

6

GHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

0.45

pF

Collector-emitter capacitance

VCE = 10 V, f = 1 MHz

Cce

0.2

pF

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

1.25

pF

Noise figure

VCE = 8 V, ZS = 50 W,

f = 800 MHz, IC = 5 mA

F

1.6

dB

VCE = 8 V, ZS = 50 W,

f = 800 MHz, IC = 25 mA

F

2.1

dB

Power gain

VCE = 8 V, ZS = 50 W,

ZL = ZLopt, IC = 25 mA, f = 800 MHz

Gpe

16

dB

VCE = 8 V, ZS = 50 W,

ZL = ZLopt, IC = 25 mA, f = 2 GHz

Gpe

9

dB

Linear output voltage – two

tone intermodulation test

VCE = 8 V, IC = 25 mA, dIM = 60 dB,

f1 = 806 MHz, f2 = 810 MHz,

ZS = ZL = 50 W

V1 = V2

260

mV

Third order intercept point

VCE = 8 V, IC = 25 mA, f = 800 MHz

IP3

31

dBm

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