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2SK3481 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SK3481 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type MOSFET 1 www.kexin.com.cn 1.27+0.1 -0.1 1.27+0.1 -0.1 5.08+0.1 -0.1 0.1max 2.54+0.2 -0.2 2.54 4.57+0.2 -0.2 0.4+0.2 -0.2 0.81+0.1 -0.1 TO-263 Unit: mm 1Gate 2Drain 3 Source MOS Field Effect Transistor 2SK3481 Features Super low on-state resistance: RDS(on)1 =50m MAX. (VGS =10V, ID = 15A) RDS(on)2 =58m MAX. (VGS =4.5 V, ID =15A) Low Ciss: Ciss = 2300 pF TYP. Built-in gate protection diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS 20 V ID 30 A Idp * 60 A Power dissipation TC=25 56 TA=25 1.5 Channel temperature Tch 150 Storage temperature Tstg -55to+150 *PW 10 s,Duty Cycle 1% Drain current PD W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current IDSS VDS=100V,VGS=0 10 A Gate leakage current IGSS VGS= 20V,VDS=0 10 A Gat cutoff voltage VGS(off) VDS=10V,ID=1mA 1.5 2.0 2.5 V Forward transfer admittance Yfs VDS=10V,ID=15A 9 18 S RDS(on)1 VGS=10V,ID=15A 40 50 m RDS(on)2 VGS=4.5V,ID=15A 44 58 m Input capacitance Ciss 2300 pF Output capacitance Coss 230 pF Reverse transfer capacitance Crss 120 pF Turn-on delay time ton 13 ns Rise time tr 10 ns Turn-off delay time toff 53 ns Fall time tf 5.0 ns Total Gate Charge QG 48 nC Gate to Source Charge QGS 7.0 nC Gate to Drain Charge QGD 12 nC VDS=10V,VGS=0,f=1MHZ ID=15A,VGS(on)=10V,RG=0 ,VDD=50V ID =30A, VDD =80V, VGS =10V Draintosourceon-stateresistance |
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