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2SK3433 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SK3433 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type MOSFET 1 www.kexin.com.cn 1.27+0.1 -0.1 1.27+0.1 -0.1 5.08+0.1 -0.1 0.1max 2.54+0.2 -0.2 2.54 4.57+0.2 -0.2 0.4+0.2 -0.2 0.81+0.1 -0.1 TO-263 Unit: mm 1Gate 2Drain 3 Source MOS Field Effect Transistor 2SK3433 Features Super low on-state resistance: RDS(on)1 = 26m MAX. (VGS =10V, ID =42A) RDS(on)2 =41m MAX. (VGS =4V, ID =42A) Low Ciss:Ciss =1500 pF TYP. Built-in gate protection diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Draintosourcevoltage VDSS 60 V Gate to source voltage VGSS 20 V ID 40 A Idp * 160 A Power dissipation TC=25 47 TA=25 1.5 Channel temperature Tch 150 Storage temperature Tstg -55to+150 *PW 10 s,Duty Cycle 1% Drain current PD W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current IDSS VDS=60V,VGS=0 10 A Gate leakage current IGSS VGS= 20V,VDS=0 10 A Gat cutoff voltage VGS(off) VDS=10V,ID=1mA 1.5 2.0 2.5 V Forward transfer admittance Yfs VDS=10V,ID=20A 11 22 S RDS(on)1 VGS=10V,ID=20A 22 26 m RDS(on)2 VGS=4V,ID=20A 29 41 m Input capacitance Ciss 1500 pF Output capacitance Coss 250 pF Reverse transfer capacitance Crss 120 pF Turn-on delay time ton 35 ns Rise time tr 320 ns Turn-off delay time toff 89 ns Fall time tf 120 ns Total Gate Charge QG 30 nC Gate to Source Charge QGS 5nC Gate to Drain Charge QGD 8nC VDS=10V,VGS=0,f=1MHZ ID=20A,VGS(on)=10V,RG=10 ,VDD=30V Draintosourceon-stateresistance ID =40A, VDD =48V, VGS =10V |
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