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BF579R Datasheet(PDF) 1 Page - Vishay Siliconix |
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BF579R Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page BF579/BF579R Vishay Telefunken www.vishay.de • FaxBack +1-408-970-5600 Rev. 3, 20-Jan-99 1 (5) Document Number 85001 Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low distortion 13 581 23 1 94 9280 BF579 Marking: G7 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter 13 581 2 3 1 9510527 BF579R Marking: GG Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Collector-base voltage –VCBO 20 V Collector-emitter voltage –VCEO 20 V Emitter-base voltage –VEBO 3 V Collector current –IC 25 mA Total power dissipation Tamb ≤ 60 °C Ptot 200 mW Junction temperature Tj 150 °C Storage temperature range Tstg –55 to +150 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 mm Cu RthJA 450 K/W |
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