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BC817 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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BC817 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type Transistors 1 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 Features For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. www.kexin.com.cn NPN Silicon AF Transistors KC817(BC817) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 45 V Emitter-base voltage VEBO 5V Collector current (DC) IC 800 mA power dissipation PD 310 mW Junction temperature Tj 150 Storage temperature Tstg -65to+150 Marking NO. KC817-16 KC817-25 KC817-40 Marking 8FA 8FB 8FC hFE 100 250 160 400 250 630 Electrical Characteristics Ta = 25 Symbol Testconditons Min Typ Max Unit VCBO IC =10 A,VBE =0 50 V VCEO IC =10mA, IB =0 45 V VEBO IE =10 A, IC =0 5V Collector cutoff current ICES VCB =25V,VBE= 0 100 nA IEBO VEB =4V, IC = 0 100 nA IC = 100 mA, VCE = 1 V 100 630 IC = 300 mA, VCE =1V 60 VCE(sat) IC = 500 mA, IB =50mA 0.7 V VBE(on) VCE=1V,IC=300mA 1.2 V Output Capacitance Cob VCB=10V,f=1MHz 12 pF fT IC =10mA, VCE = 5 V, f = 50 MHz 100 MHz * Pulsed: PW 350 ìs, duty cycle 2% Base emitter on voltage Transition frequency Collector saturation voltage * Parameter Emitter cutoff current Emitter-to-base breakdown voltage hFE Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage DC current gain * |
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