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2SJ302 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SJ302 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type MOSFET 1 www.kexin.com.cn Mos Field Effect Power Transistor 2SJ302 1.27+0.1 -0.1 1.27+0.1 -0.1 5.08+0.1 -0.1 0.1max 2.54+0.2 -0.2 2.54 4.57+0.2 -0.2 0.4+0.2 -0.2 0.81+0.1 -0.1 TO-263 Unit: mm Features Low on-state resistance RDS(on) 0.1 (VGS=-10V,ID=-8A) RDS(on) 0.24 (VGS=-4V,ID=-6A) Low Ciss Ciss=1200PF TYP. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Draintosourcevoltage VDSS -60 V Gate to source voltage VGSS -20,+10 V Drain current (DC) ID 16 A Drain current(pulse) * ID 64 A Power dissipation PD 75 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 *PW 10 s; d 1%. 1Gate 2Drain 3 Source Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current IDSS VDS=-60V,VGS=0 -10 A Gate leakage current IGSS VGS= 16V,VDS=0 10 A Gate cut-off voltage VGS(off) VDS=-10V,ID=-1mA -1.0 -2.0 V Forward transfer admittance Yfs VDS=-10V,ID=-8A 5.0 s VGS=-10V,ID=-8A 75 100 m VGS=-4V,ID=-6A 130 240 m Input capacitance Ciss 1200 pF Output capacitance Coss 670 pF Reverse transfer capacitance Crss 290 pF Turn-on delay time td(on) 30 ns Rise time tr 170 ns Turn-off delay time td(off) 150 ns Fall time tf 130 ns Total Gate Charge QG VGS=-10V,ID=-8A 42 nc Gate to Source Charge QGS ID=-16V 3 nc Gate to Drain Charge QGD VDD=-48V 17 nc Reverse Recovery Time trr 110 ns Reverse Recvery Charge Qrr 220 nc Diode Forward Voltage VSD IF=-16A,VGS=0 1 V IF=-16A,VGS=0,di/dt=50A/ s VDS=-10V,VGS=0,f=1MHZ VGS(on)=-10V,VDD=-30V,ID=--8A RL=3.75 ,RG=10 Drain to source on-state resistance RDS(on) |
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