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1N5266B Datasheet(PDF) 1 Page - Vishay Siliconix |
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1N5266B Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page 1N5221B...1N5267B Vishay Telefunken Rev. 2, 06-Aug-99 1 (4) www.vishay.de • FaxBack +1-408-970-5600 Document Number 85588 Silicon Z–Diodes Features D Very sharp reverse characteristic D Very high stability D Low reverse current level D VZ–tolerance ± 5% Applications Voltage stabilization 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol Value Unit Power dissipation TLx75°C PV 500 mW Z–current IZ PV/VZ mA Junction temperature Tj 200 °C Storage temperature range Tstg –65...+200 °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction ambient l=9.5mm (3/8”), TL=constant RthJA 300 K/W Electrical Characteristics Tj = 25_C Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage IF=200mA VF 1.1 V |
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