2SA1179 datasheet(1/1 Pages) KEXIN

Part #	2SA1179

Description	PNP Epitaxial Planar Silicon Transistors

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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SMD Type

IC

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SMD Type

Transistors

PNP Epitaxial Planar Silicon Transistors

2SA1179

0.4+0.1

-0.1

2.9+0.1

-0.1

0.95+0.1

-0.1

1.9+0.1

-0.1

1.Base

2.Emitter

3.collector

12

3

Unit: mm

SOT-23

0.1+0.05

-0.01

Features

High breakdown voltage

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

-55

V

Collector-emitter voltage

VCEO

-50

V

Emitter-base voltage

VEBO

-5

V

Collector current

IC

-150

mA

Collector dissipation

PC

200

mW

Jumction temperature

Tj

150

Storage temperature

Tstg

-50 to 150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC = -10ìA , IE =0A

-55

V

Collector-emitter breakdown voltage

VCEO

IC =-1mA,RBE =

-50

V

Emitter-base breakdown voltage

VEBO

IE = -10ìA , IC =0A

-5

V

Collector cutoff current

ICBO

VCB = -35V , IE =0A

-0.1

A

Emitter cutoff current

IEBO

VEB =-4V ,IC =0

-0.1

A

DC current Gain

hFE

VCE =-6V ,IC = -1mA

200

400

Collector-emitter saturation voltage

VCE(sat) IC = -50mA , IB = -5mA

-0.5

V

Base-emitter saturation voltage

VBE(sat) IC = -50mA , IB = -5mA

-1.0

V

Output capacitance

Cob

VCB =-6V ,IE=0 ,f = 1MHz

4.0

pF

Transition frequency

fT

VCE =-6V ,IC = -10mA

180

MHz

Marking

M

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