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LT3435IFE Datasheet(PDF) 6 Page - Linear Technology |
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LT3435IFE Datasheet(HTML) 6 Page - Linear Technology |
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6 / 24 page  LT3435 6 3435fa 3435 G19 3.5 0 4.0 2.5 3.0 1.5 2.0 0.5 1.0 INPUT VOLTAGE (V) 2 2.5 3 3.5 4 4.5 5 5.5 6 LOAD CURRENT = 250mA VOUT = 3.3V BOOST DIODE = DIODES INC DFLS160 LOAD CURRENT = 2.5A 3435 G20 5 0 6 3 4 1 2 INPUT VOLTAGE (V) 2 2.5 3 3.5 4 4.5 5 5.5 6.5 7 7.5 6 VOUT = 5V BOOST DIODE = DIODES INC DFLS160 LOAD CURRENT = 2.5A LOAD CURRENT = 250mA No Load 2A Step Response Step Response VOUT 200mV/DIV AC-COUPLED IOUT 1A/DIV VIN = 12V 500 µs/DIV 3435 G23 VOUT = 3.3V COUT = 100µF VOUT 200mV/DIV AC-COUPLED IOUT 1A/DIV VIN = 12V 500 µs/DIV 3435 G24 VOUT = 3.3V COUT = 100µF ILOAD(DC) = 500mA NC (Pin 1): No Connection. SW (Pins 2, 5): The SW pin is the emitter of the on-chip power NPN switch. This pin is driven up to the input pin voltage during switch on time. Inductor current drives the SW pin negative during switch off time. Negative voltage is clamped with the external catch diode. Maximum nega- tive switch voltage allowed is –0.8V. VIN (Pins 3, 4): This is the collector of the on-chip power NPN switch. VIN powers the internal control circuitry when a voltage on the BIAS pin is not present. High di/dt edges occur on this pin during switch turn on and off. Keep the path short from the VIN pin through the input bypass capacitor, through the catch diode back to SW. All trace PI FU CTIO S TYPICAL PERFOR A CE CHARACTERISTICS inductance on this path will create a voltage spike at switch off, adding to the VCE voltage across the internal NPN. BOOST (Pin 6): The BOOST pin is used to provide a drive voltage, higher than the input voltage, to the internal bipolar NPN power switch. Without this added voltage, the typical switch voltage loss would be about 1.5V. The additional BOOST voltage allows the switch to saturate and its voltage loss approximates that of a 0.1 Ω FET structure. CT (Pin 7): A capacitor on the CT pin determines the amount of delay time between the PGFB pin exceeding its thresh- old (VPGFB) and the PG pin set to a high impedance state. Burst Mode Operation Burst Mode Operation VOUT 50mV/DIV AC-COUPLED ISW 500mA/DIV VIN = 12V 10ms/DIV 3435 G21 VOUT = 3.3V VOUT 50mV/DIV AC-COUPLED ISW 500mA/DIV VIN = 12V 10 µs/DIV 3435 G22 VOUT = 3.3V Dropout Operation Dropout Operation |
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