KI2302DS datasheet(2/2 Pages) KEXIN

Part #	KI2302DS

Description	N-Channel 1.25-W, 2.5-V MOSFET

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

Diodes

SMD Type

Transistors

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Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

V(BR)DSS

VGS =0V, ID =10ìA

20

Gate-Threshold Voltage

VGS(th)

VDS =VGS,ID =50ìA

0.65

Gate-Body Leakage

IGSS

VDS =0V, VGS =

8V

100

nA

VDS =20V, VGS =0V

1

VDS =20V, VGS =0V, TJ =55

10

VDS

5V, VGS =4.5 V

6

VDS

5V, VGS =2.5 V

4

VGS =4.5 V, ID = 3.6 A

0.07

0.085

VGS =2.5 V, ID = 3.1 A

0.085 0.115

Forward Transconductance *

gfs

VDS =5V, ID =3.6 A

10

S

Diode Forward Voltage

VSD

IS =1.6 A, VGS = 0 V

0.76

1.2

V

Total Gate Charge

Qg

5.4

10

Gate-Source Charge

Qgs

0.65

Gate-Drain Charge

Qgd

1.60

Input Capacitance

Ciss

340

Output Capacitance

Coss

115

Reverse Transfer Capacitance

Crss

33

Turn-On Delay Time

td(on)

12

25

Rise Time

tr

36

60

Turn-Off Delay Time

td(off)

34

60

Fall-Time

tf

10

25

*Pulse test: PW

300 ìs duty cycle

2%..

nC

Drain-Source On-Resistance *

ns

VDD=10V,RL=5.5

Ù,ID=3.6A,VGEN=4.5V,RG=6Ù

Zero Gate Voltage Drain Current

IDSS

On-State Drain Current *

ID(on)

rDS(on)

VDS=10V,VGS=0V,f=1MHz

pF

VDS=10V,VGS=4.5V,ID=3.6A

V

ìA

A

Ù

Marking

A2

KI2302DS

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KI2302DS Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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