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2

SMD Type

IC

SMD Type

Transistors

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

250

285

V

Zero Gate Voltage Drain Current

35

500

nA

Gate-Body Leakage

1

100

nA

Gate-Source Threshold Voltage

0.8

1.4

1.8

V

5.6

8.5

5.9

9.0

6.4

9.5

Forward Transconductance *3

0.3

0.475

S

Input Capacitance

72

pF

Output Capacitance

11

pF

Reverse Transfer Capacitance

3.6

pF

Turn-On Delay Time

1.25

ns

Rise Time

1.70

ns

Turn-Off Delay Time

11.40

ns

Fall Time

3.5

ns

Total Gate Charge

2.6

3.65

nC

Gate-Source Charge

0.2

0.28

nC

Gate Drain Charge

0.5

0.7

nC

Diode Forward Voltage*!

0.97

V

Reverse Recovery Time *3

186

260

ns

Reverse Recovery Charge *3

s

34

48

nC

*! Measured under pulsed conditions. Width=300

s. Duty cycle

2% .

*2 Switching characteristics are independent of operating junction temperature.

*3 For design aid only, not subject to production testing.

Static Drain-Source On-State Resistance *1

,

Vqs=10V *2

KVN4525E6

Marking

Marking

N52