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4N32-X007 Datasheet(PDF) 2 Page - Vishay Siliconix |
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4N32-X007 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com 2 Document Number 83736 Rev. 1.4, 26-Jan-05 4N32/ 4N33 Vishay Semiconductors Output Coupler Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Value Unit Collector-emitter breakdown voltage BVCEO 30 V Emitter-base breakdown voltage BVEBO 8.0 V Collector-base breakdown voltage BVCBO 50 V Emitter-collector breakdown voltage BVECO 5.0 V Collector (load) current IC 125 mA Power dissipation Pdiss 150 mW Derate linearly 2.0 mW/°C Parameter Test condition Symbol Value Unit Total dissipation Ptot 250 mW Derate linearly 3.3 mW/° Isolation test voltage (between emitter and detector, Standard Climate: 23 °C/ 50 %RH, \\nDIN 500 14) VISO 5300 VRMS Leakage Path 7.0 mm min. Air Path 7.0 mm min. Isolation Resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storange temperature Tamb - 55 to + 150 °C Operating temperature Tstg - 55 to + 100 °C Lead soldering time at 260 °C 10 s Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 50 mA VF 1.25 1.5 V Reverse current VR = 3.0 V IR 0.1 100 µ Capacitance VR = 0 V CO 25 pF |
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