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KC857C Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Part # KC857C
Description  PNP Transistor
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

KC857C Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
Transistors
2
www.kexin.com.cn
Electrical Characteristics Ta = 25
Symbol
Testconditons
Min
Typ
Max
Unit
KC856
-80
KC857
-50
KC858
-30
KC856
-65
KC857
-45
KC858
-30
Emitter-base breakdown voltage
VEBO
IE= -10ìA, IC=0
-5
V
KC856
VCB=-70 V,IE=0
KC857
VCB=-45 V,IE=0
KC858
VCB=-25 V,IE=0
KC856
VCE=-60 V,IB=0
KC857
VCE=-40 V,IB=0
KC858
VCE=-25 V,IB=0
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1
A
KC856A, 857A,858A
120
250
KC856B, 857B,858B
220
475
KC857C,KC858C
420
800
Collector-emitter saturation voltage
VCE(sat) IC=-100mA, IB=-5mA
-0.5
V
Base-emitter saturation voltage
VBE(sat) IC= -100 mA, IB= -5mA
-1.1
V
Collector capacitance
Cob
VCB=-10V,f=1MHz
4.5
pF
Transition frequency
fT
VCE=-5V,IC=-
10mA,f=100MHz
100
MHz
V
V
VCE=-5V,IC=-2mA
A
A
-0.1
-0.1
Parameter
Ic= -10ìA, IE=0
Ic=-10 mA,IB=0
ICBO
Collector cut-off current
Collector-base breakdown voltage
VCBO
VCEO
Collector-emitter breakdown voltage
hFE
DC current gain
Collector cut-off current
ICEO
Marking
NO.
KC856A
KC856B
Marking
3A
3B
NO.
KC857A
KC857B
KC857C
Marking
3E
3F
3G
NO.
KC858A
KC858B
KC858C
Marking
3J
3K
3L
KC856A,B/KC857A,B,C/KC858A,B,C
(BC856A,B/BC857A,B,C/BC858A,B,C)


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