KI1903DL datasheet(2/2 Pages) KEXIN

Part #	KI1903DL

Description	Dual P-Channel 2.5-V (G-S) MOSFET

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

IC

SMD Type

Transistors

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Gate threshold voltage

VGS(th)

VDS =VGS,ID = -250

A

-0.6

V

Gate-body leakage

IGSS

VDS =0V, VGS =

12 V

100

nA

VDS =-16 V, VGS =0V

-1

VDS =-16 V, VGS =0V, TJ =85

-5

On-state drain current

ID(on)

VDS =-5 V, VGS =-4.5V

-1.0

A

VGS =-4.5V, ID = -0.41 A

0.850 0.995

VGS =-3.6V, ID = -0.38 A

1.0

1.190

VGS = -2.5V, ID =-0.25A

1.4

1.80

Forward transconductance

gfs

VDS =-10 V, ID = -0.41 A

0.8

S

Diode forward voltage

VSD

IS = -0.23 A, VGS = 0 V

-0.8

-1.2

V

Total gate charge *

Qg

1.2

1.8

Gate-source charge *

Qgs

0.45

Gate-drain charge *

Qgd

0.25

td(on)

7.5

15

tr

20

40

td(off)

8.5

17

tf

12

24

Source-Drain Reverse Recovery Time

trr

IF = -0.23 A, di/dt = 100 A/

s

25

40

* Pulse test: PW

300 ìs duty cycle

2%.

Turn-off time

Turn-on time

ns

VDS =-10V ,VGS =-4.5V , ID= -0.41A

VDD = -10V , RL =20

,

ID =-0.5A , VGEN =-4.5V , RG =6

nC

Zero gate voltage drain current

IDSS

A

Drain-source on-state resistance

rDS(on)

KI1903DL

Marking

QA

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KI1903DL Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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