BC859BW datasheet(2/2 Pages) KEXIN

Part #	BC859BW

Description	PNP General Purpose Transistor

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

IC

SMD Type

Transistors

Electrical Characteristics Ta = 25

Symbol

Testconditons

Min

Typ

Max

Unit

ICBO

IE =0; VCB = -30 V

-15

nA

ICBO

IE =0; VCB =-30 V; Tj = 150

-4

ìA

IEBO

IC =0; VEB = -5 V

-100

nA

BC859W; BC860W

220

800

BC859BW; BC860BW

220

475

BC859CW; BC860CW

420

800

IC =-10 mA; IB = -0.5 mA

-300

mV

IC = -100 mA; IB = -5 mA;

-650

mV

IC =-2mA; VCE = -5 V

600

750

mV

IC =-10 mA; VCE = -5 V

820

mV

CC

IE =ie=0; VCB = -10 V;f= 1 MHz

5

pF

Ce

IC =ic = 0; VEB = -500 mV; f = 1 MHz

10

pF

fT

IC =-10 mA; VCE = -5 V; f = 100 MHz

100

MHz

IC = -200 ìA; VCE =-5V; RS =2kÙ;f

=10Hzto15.7kHz

4

IC=-200 ìA; VCE =-5V; RS =2kÙ;f =

1 kHz; B = 200 Hz

4

*1. VBEsat decreases by about -1.7 mV/K with increasing temperature.

*2. VBE decreases by about -2 mV/K with increasing temperature.

hFE

Emitter capacitance

VBE

Base-emitter voltage *2

Transition frequency

Noise figure

IC =-2mA; VCE =-5V;

NF

dB

BC859W; BC860W;

BC859BW; BC860BW;

BC859CW; BC860CW

Parameter

Collector-emitter saturation voltage

VCE(sat)

DC current gain

Collector cutoff current

Collector capacitance

Emitter cutoff current

BC859W,BC860W

hFE Classification

TYPE

BC859W

BC859BW

BC859CW

Marking

4D

4B

4C

TYPE

BC860W

BC860BW

BC860CW

Marking

4H

4F

4G

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