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2SB1397 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SB1397 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type Transistors 1 www.kexin.com.cn PNP Epitaxial Planar Silicon Transistors 2SB1397 Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between base and emitter. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -25 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -2 A Collector current (pulse) ICP -4 A Collector dissipation PC *1.3 W Jumction temperature Tj 150 Storage temperature Tstg -55to+150 * Mounted on ceramic board (250mm 2X0.8mm) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = -20V , IE =0 -1 nA VCE =-2V , IC = -0.5A 70 VCE =-2V , IC = -2A 50 Gain bandwidth product fT VCE =-2V , IC = -0.5A 300 MHz Output capacitance Cob VCB = -10V , f = 1MHz 40 pF Collector-emitter saturation voltage VCE(sat) IC =-1A , IB = -50mA -0.25 -0.5 V Base-emitter saturation voltage VBE(sat) IC =-1A , IB = -50mA -1.5 V Collector-to-base breakdown voltage V(BR)CBO IC = -10ìA , IE =0 -25 V Collector-to-emitter breakdown voltage V(BR)CEO1 IC = -10ìA , RBE = -25 V Collector-to-emitter breakdown voltage V(BR)CEO2 IC = -10mA , RBE = -20 Diode forward voltage VF IF=0.5A -1.5 V Base-emitter resistance RBE 1.6 KÙ DC current Gain hFE Marking Marking BP |
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