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TC4432EJA Datasheet(PDF) 2 Page - TelCom Semiconductor, Inc |
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TC4432EJA Datasheet(HTML) 2 Page - TelCom Semiconductor, Inc |
2 / 4 page 4-258 TELCOM SEMICONDUCTOR, INC. 1.5A HIGH-SPEED 30V MOSFET DRIVERS TC4431 TC4431 ELECTRICAL CHARACTERISTICS: TA = +25°C with 5.0 ≤ VDD ≤ 30V, unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit Input VIH Logic 1 High Input Voltage 2.4 — — V VIL Logic 0 Low Input Voltage — — 0.8 V IIN Input Current (Note 1) 0V ≤ V IN ≤ V DD (16V MAX) –1 — 1 µA Output VOH High Output Voltage IOUT = 100mA VDD – 1.0 VDD – 0.8 — V VOL Low Output Voltage — — 0.025 V RO Output Resistance (VOL)VDD = 30V, IO = 10mA — 7 10 Ω IPK Peak Output Current Source: VDD = 30V — 3.0 — A Sink: VDD = 30V — 1.5 — IREV Latch-Up Protection Duty Cycle ≤ 2% 0.3 — — A Withstand Reverse Current t ≤ 300 µsec Switching Time (Note 2) tR Rise Time Figure 1 — 25 40 nsec tF Fall Time Figure 1 — 33 50 nsec tD1 Delay Time Figure 1 — 62 80 nsec tD2 Delay Time Figure 1 — 78 90 nsec Power Supply IS Power Supply Current VIN = 3V — 2.5 4 mA VIN = 0V — 0.3 0.4 VS Start-up Threshold — 8.4 10 V VDO Drop-out Threshold (Note 3) 7 7.7 — V ABSOLUTE MAXIMUM RATINGS* Supply Voltage ............................................................36V Input Voltage (Note 1) ........................ VDD + 0.3V to GND Maximum Chip Temperature ................................. +150 °C Storage Temperature Range ................ – 65 °C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300 °C Package Thermal Resistance CerDIP RθJ-A ................................................ 150°C/W CerDIP RθJ-C .................................................. 50°C/W PDIP RθJ-A ................................................... 125°C/W PDIP RθJ-C ..................................................... 42°C/W SOIC RθJ-A ................................................... 250°C/W SOIC RθJ-C ..................................................... 75°C/W *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause perma- nent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Operating Temperature Range C Version ............................................... 0 °C to +70°C E Version ........................................... - 40 °C to +85°C Package Power Dissipation (TA ≤ 70°C ) Plastic ............................................................. 730mW CerDIP ............................................................ 800mW SOIC ............................................................... 470mW |
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