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TC4432EJA Datasheet(PDF) 2 Page - TelCom Semiconductor, Inc

Part # TC4432EJA
Description  1.5A HIGH-SPEED 30V MOSFET DRIVERS
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Manufacturer  TELCOM [TelCom Semiconductor, Inc]
Direct Link  http://www.telcom-semi.com
Logo TELCOM - TelCom Semiconductor, Inc

TC4432EJA Datasheet(HTML) 2 Page - TelCom Semiconductor, Inc

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TELCOM SEMICONDUCTOR, INC.
1.5A HIGH-SPEED 30V MOSFET DRIVERS
TC4431
TC4431
ELECTRICAL CHARACTERISTICS: TA = +25°C with 5.0 ≤ VDD ≤ 30V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1 High Input Voltage
2.4
V
VIL
Logic 0 Low Input Voltage
0.8
V
IIN
Input Current (Note 1)
0V
V
IN
V
DD (16V MAX)
–1
1
µA
Output
VOH
High Output Voltage
IOUT = 100mA
VDD – 1.0
VDD – 0.8
V
VOL
Low Output Voltage
0.025
V
RO
Output Resistance (VOL)VDD = 30V, IO = 10mA
7
10
IPK
Peak Output Current
Source: VDD = 30V
3.0
A
Sink: VDD = 30V
1.5
IREV
Latch-Up Protection
Duty Cycle
2%
0.3
A
Withstand Reverse Current
t
300 µsec
Switching Time (Note 2)
tR
Rise Time
Figure 1
25
40
nsec
tF
Fall Time
Figure 1
33
50
nsec
tD1
Delay Time
Figure 1
62
80
nsec
tD2
Delay Time
Figure 1
78
90
nsec
Power Supply
IS
Power Supply Current
VIN = 3V
2.5
4
mA
VIN = 0V
0.3
0.4
VS
Start-up Threshold
8.4
10
V
VDO
Drop-out Threshold
(Note 3)
7
7.7
V
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ............................................................36V
Input Voltage (Note 1) ........................ VDD + 0.3V to GND
Maximum Chip Temperature ................................. +150
°C
Storage Temperature Range ................ – 65
°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300
°C
Package Thermal Resistance
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 50°C/W
PDIP RθJ-A ................................................... 125°C/W
PDIP RθJ-C ..................................................... 42°C/W
SOIC RθJ-A ................................................... 250°C/W
SOIC RθJ-C ..................................................... 75°C/W
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
Operating Temperature Range
C Version ............................................... 0
°C to +70°C
E Version ........................................... - 40
°C to +85°C
Package Power Dissipation (TA ≤ 70°C )
Plastic ............................................................. 730mW
CerDIP ............................................................ 800mW
SOIC ............................................................... 470mW


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