4-247

TELCOM SEMICONDUCTOR, INC.

7

6

5

4

3

1

2

8

1.5A DUAL HIGH-SPEED

POWER MOSFET DRIVERS

TC4426

TC4427

TC4428

range with 4.5V

DD

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Input

Logic 1 High Input Voltage

2.4

—

—

V

Logic 0 Low Input Voltage

—

—

0.8

V

Input Current

0V

– 10

—

10

µA

Output

High Output Voltage

—

—

V

Low Output Voltage

—

—

0.025

V

Output Resistance

—

9

12

Ω

Peak Output Current

Duty Cycle

—

1.5

—

A

Latch-Up Protection

Duty Cycle

≤ 2%

> 0.5

—

—

A

Withstand Reverse Current

t

≤ 300µsec

Switching Time (Note 1)

Rise Time

Figure 1

—

—

40

nsec

Fall Time

Figure 1

—

—

40

nsec

Delay Time

Figure 1

—

—

40

nsec

Delay Time

Figure 1

—

—

60

nsec

Power Supply

Power Supply Current

—

—

8

mA

—

—

0.6

NOTE: 1. Switching times are guaranteed by design.

+5V

INPUT

10%

90%

10%

90%

10%

90%

VDD

OUTPUT

tD1

0V

90%

10%

10%

10%

90%

+5V

INPUT

VDD

OUTPUT

0V

0V

0V

90%

OUTPUT

INPUT

0.1 µF

CL = 1000 pF

4.7 µF

VDD= 18V

Inverting Driver

3

2,4

5,7

6

Noninverting Driver

tF

tD2

tR

tR

tD1

tD2

INPUT: 100 kHz, square wave,

tRISE = tFALL ≤ 10ns

Figure 1. Switching Time Test Circuit

NOTE: The values on this graph represent the loss seen by both drivers in a package

during one complete cycle. For a single driver, divide the stated values by 2. For a

single transition of a single driver, divide the stated value by 4.

200

0

400

600

800

1000

1200

1400

1600

0

10

20

30

40

50

60

70

80

90

100

110

120

AMBIENT TEMPERATURE (

°C)

8 Pin DIP

Thermal Derating Curves

8 Pin CerDIP

8 Pin SOIC

Crossover Energy Loss

4

18

6

8

10

12

14

16

8

7

6

5

4

3

2

10

–9

10

–8

9

VDD