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2SB1197K Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part # 2SB1197K
Description  Low Frequency Transistor
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SB1197K Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SB1197K Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
Transistors
1
0.4+0.1
-0.1
2.9+0.1
-0.1
0.95+0.1
-0.1
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
12
3
Unit: mm
SOT-23
0.1+0.05
-0.01
www.kexin.com.cn
Low Frequency Transistor
2SB1197K
Features
Low VCE(sat).VCE(sat)
-0.5V
IC /IB= -0.5A / -50mA
.
IC = -0.8A.
PNP silicon transistor
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base Voltage
VCBO
-40
V
Collector-emitter Voltage
VCEO
-32
V
Emitter-base Voltage
VEBO
-5
V
Collector current
IC
-0.8
A
Collector power dissipation
PC
0.2
W
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltae
VCBO
IC =-50
A
-40
V
Collector-emitter breakdown voltage
VCEO
IC = -1mA
-32
V
Emitter-base breakdown voltage
VEBO
IE =-50
A
-5
V
Collector cutoff current
ICBO
VCB = -20V
-0.5
A
Emitter cutoff current
IEBO
VEB =-4V
-0.5
A
Collector-Emitter Saturation Voltage
VCE(sat) IC = -0.5A , IB =-50mA
-0.5
V
DC current transfer ratio
hFE
VCE =-3V ,IC = -100mA
120
390
Output Capacitance
Cob
VCB = -10V , IE = 0A , f = 1MHz
12
30
pF
Transition frequency
fT
VCE =-5V ,IE = 50mA , f = 100MHz
200
MHz
hFE Classification
Marking
AHQ
AHR
Rank
Q
R
hFE
120
270
180
390


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