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2SA1455K Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part No. 2SA1455K
Description  Epitaxial Planar PNP Silicon Transistor
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Maker  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Homepage  www.chinakexin.com/
Logo 

   
 1 page
background image
SMD Type
Transistors
1
www.kexin.com.cn
0.4+0.1
-0.1
2.9+0.1
-0.1
0.95+0.1
-0.1
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
12
3
Unit: mm
SOT-23
0.1+0.05
-0.01
Epitaxial Planar PNP Silicon Transistor
2SA1455K
Features
High breakdown voltage:VCEO=-120V
Low noise design:NF=0.2dB(Typ.)
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-120
V
Collector-emitter voltage
VCEO
-120
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-50
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55to+150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO
IC=-50ìA
-120
V
Collector-emitter breakdown voltage
BVCEO
IC=-1mA
-120
V
Emitter-base breakdown voltage
BVEBO
IE=-50ìA
-5
V
Collector cutoff current
ICBO
VCB=-100V
-0.5
ìA
Emitter cutoff current
IEBO
VEB=-4V
-0.5
ìA
DC current transfer ratio
hFE
VCE=-6V, IC=-2mA
180
820
Collector-emitter saturation voltage
VCE(sat) IC=-10mA, IB=-1mA
-0.5
V
Output capacitance
fT
VCE=-12V, IE= 2mA, f=30MHz
140
MHz
Transition frequency
Cob
VCB=-12V, IE=0A, f=1MHz
3.2
pF
hFE Classification
Marking
Rank
R
S
E
hFE
180
390
270
560
390
820
G




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