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TP2435 Datasheet(PDF) 2 Page - Supertex, Inc |
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TP2435 Datasheet(HTML) 2 Page - Supertex, Inc |
2 / 4 page 2 TP2435 Switching Waveforms and Test Circuit 90% 10% 90% 90% 10% 10% PULSE GENERATOR V DD R L OUTPUT D.U.T. t (ON) t d(ON) t (OFF) t d(OFF) t F t r INPUT INPUT OUTPUT 0V V DD R gen 0V -10V Thermal Characteristics Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja I DR*IDRM @ T A = 25°C °C/W °C/W TO-243AA -231mA -1.1A 1.6W† 15 78† -231mA -1.1A * I D (continuous) is limited by max rated Tj. † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P D increase possible on ceramic substrate. Symbol Parameter Min Typ Max Unit Conditions BV DSS Drain-to-Source -350 V V GS = 0V, ID = -250µA Breakdown Voltage VGS(th) Gate Threshold Voltage -1.0 -2.4 V VGS = VDS, ID= -1.0mA ∆VGS(th) Change in V GS(th) with Temperature 4.5 mV/°CVGS = VDS, ID= -1.0mA IGSS Gate Body Leakage -100 nA VGS = ± 20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10.0 µAVGS = 0V, VDS = Max Rating -1.0 mA V GS = 0V, VDS = 0.8 Max Rating TA = 125°C I D(ON) ON-State Drain Current -0.3 V GS = -4.5V, VDS = -25V -0.8 VGS = -10V, VDS = -25V RDS(ON) 15 Ω VGS = -3.0V, ID = -20mA 15 V GS = -4.5V, ID = -150mA 15 VGS = -10V, ID = -500mA ∆RDS(ON) Change in RDS(ON) with Temperature 1.7 %/°CVGS = -10V, ID = -150mA G FS Forward Transconductance 125 m V DS = -25V, ID = -350mA CISS Input Capacitance 200 C OSS Common Source Output Capacitance 70 pF C RSS Reverse Transfer Capacitance 25 td(ON) Turn-ON Delay Time 15 t r Rise Time 20 t d(OFF) Turn-OFF Delay Time 25 tf Fall Time 50 V SD Diode Forward Voltage Drop -1.5 V V GS = 0V, ISD = -750mA t rr Reverse Recovery Time 300 ns V GS = 0V, ISD = -750mA Notes: 1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) A ns VDD = -25V, I D = -250mA, R GEN = 25Ω VGS = 0V, VDS = -25V f = 1.0 MHz Static Drain-to-Source ON-State Resistance |
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