2

TN2640

Package

I

I

Power Dissipation

I

TO-92

220mA

2.0A

1.0W

125

170

220mA

2.0A

SO-8

260mA

2.0A

24

260mA

2.0A

DPAK

500mA

3.0A

6.25

50

500mA

3.0A

* I

Thermal Characteristics

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

10V

V

DD

R

gen

0V

0V

Switching Waveforms and Test Circuit

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

400

V

Gate Threshold Voltage

0.8

2.0

V

-2.5

-4.0

I

GSS

Gate Body Leakage

100

nA

V

Zero Gate Voltage Drain Current

10

1.0

mA

ON-State Drain Current

1.5

3.5

2.0

4.0

V

3.2

5.0

3.0

5.0

Change in R

0.75

Forward Transconductance

200

330

m

C

ISS

Input Capacitance

180

225

C

OSS

Common Source Output Capacitance

35

70

pF

Reverse Transfer Capacitance

7.0

25

t

d(ON)

Turn-ON Delay Time

4.0

15

t

r

Rise Time

15

20

Turn-OFF Delay Time

20

25

t

f

Fall Time

22

27

V

SD

Diode Forward Voltage Drop

0.9

V

V

Reverse Recovery Time

300

ns

Notes:

1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

A

Drain-to-Source

Breakdown Voltage

f = 1.0 MHz

R

ns

Static Drain-to-Source

ON-State Resistance

Ω