JANTXV2N6798 datasheet(1/7 Pages) IRF

Part #	JANTXV2N6798

Description	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS THRU-HOLE (TO-205AF)

Download	7 Pages

Scroll/Zoom	100%

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

Logo

1 / 7 page

Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

5.5

ID @ VGS = 10V, TC = 100°C

Continuous Drain Current

3.5

IDM

Pulsed Drain Current ➀

22

PD @ TC = 25°C

Max. Power Dissipation

2 5

W

Linear Derating Factor

0.20

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy ➁

54

mJ

IAR

Avalanche Current ➀

—A

EAR

Repetitive Avalanche Energy ➀

—mJ

dv/dt

Peak Diode Recovery dv/dt ➂

4.5

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063 in. (1.6mm) from case for 10s)

Weight

0.98(typical)

g

PD -90431C

The HEXFET



technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance.

The HEXFET transistors also feature all of the well

established advantages of MOSFETs such as volt-

age control, very fast switching, ease of parelleling

and temperature stability of the electrical parameters.

They are well suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high energy pulse circuits.

o C

A

01/22/01

www.irf.com

1

TO-39

Product Summary

Part Number

BVDSS

RDS(on)

ID

IRFF230

200V

0.40

Ω

5.5A

Features:

n Repetitive Avalanche Ratings

n Dynamic dv/dt Rating

n Hermetically Sealed

n Simple Drive Requirements

n Ease of Paralleling

For footnotes refer to the last page

IRFF230

REPETITIVE AVALANCHE AND dv/dt RATED

JANTX2N6798

HEXFET



TRANSISTORS

JANTXV2N6798

THRU-HOLE (TO-205AF)

REF:MIL-PRF-19500/557

200V, N-CHANNEL

Similar Part No. - JANTXV2N6798

Manufacturer	Part #	Datasheet	Description
International Rectifier	JANTXV2N6798	231Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=5.5A)
List of Unclassifed Man...	JANTXV2N6798	47Kb / 5P	100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor
International Rectifier	JANTXV2N6798U	201Kb / 7P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)

More results

Similar Description - JANTXV2N6798

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRFF9220	130Kb / 7P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS THRU-HOLE (TO-205AF)
	IRFF310	129Kb / 7P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS THRU-HOLE (TO-205AF)
	IRFF210	130Kb / 7P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS THRU-HOLE (TO-205AF)
	IRFF120	131Kb / 7P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF)
	IRFAG40	146Kb / 7P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS THRU-HOLE (TO-204AA/AE)
	IRFAC40	152Kb / 7P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS THRU-HOLE (TO-204AA/AE)
New Jersey Semi-Conduct...	IRF240	101Kb / 2P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE
International Rectifier	IRFAE30	146Kb / 7P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
	IRF460PBF	143Kb / 7P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?숿RANSISTORS THRU-HOLE (TO-204AA/AE)
	IRF034	144Kb / 7P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

More results

JANTXV2N6798 Datasheet(PDF) 1 Page - International Rectifier

JANTXV2N6798 Datasheet(HTML) 1 Page - International Rectifier

Similar Part No. - JANTXV2N6798

Similar Description - JANTXV2N6798

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL