2

TN2504

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

40

V

V

GS(th)

Gate Threshold Voltage

0.6

1.6

V

V

-3.8

-4.5

Gate Body Leakage

100

nA

I

DSS

Zero Gate Voltage Drain Current

10

1mA

T

ON-State Drain Current

1.0

1.7

4.0

4.5

R

DS(ON)

1.25

1.5

Ω

V

0.8

1.0

0.75

G

FS

Forward Transconductance

0.5

0.7

V

Input Capacitance

70

125

C

OSS

Common Source Output Capacitance

50

70

pF

C

RSS

Reverse Transfer Capacitance

20

25

Turn-ON Delay Time

10

t

r

Rise Time

10

t

d(OFF)

Turn-OFF Delay Time

25

Fall Time

13

V

SD

Diode Forward Voltage Drop

1.2

1.8

V

V

t

rr

Reverse Recovery Time

300

ns

V

Notes:

1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

A

Thermal Characteristics

Package

Power Dissipation

@ T

TO-243AA

0.89A

4.5A

15

0.89A

4.5A

Drain-to-Source

Breakdown Voltage

Static Drain-to-Source

ON-State Resistance

V

R

ns

f = 1 MHz

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

10V

V

DD

R

gen

0V

0V

Switching Waveforms and Test Circuit