7-52

Package

I

I

Power Dissipation

θ

jc

θ

ja

I

TO-92

0.8A

3.2A

1W

125

170

0.8A

3.2A

TO-220

3.0A

4.1A

45W

2.7

70

3.0A

4.1A

TN0606/TN0610

Thermal Characteristics

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

10V

V

DD

R

gen

0V

0V

Switching Waveforms and Test Circuit

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

BV

DSS

TN0610

100

TN0606

60

V

GS(th)

Gate Threshold Voltage

0.6

2.0

V

V

∆V

GS(th)

Change in V

-4.5

mV/

°CV

Gate Body Leakage

100

nA

I

DSS

Zero Gate Voltage Drain Current

10

µAV

1.0

mA

V

T

I

D(ON)

ON-State Drain Current

1.2

2.0

V

3.0

6.7

15

V

R

DS(ON)

1.5

2.0

V

1.0

1.5

∆R

DS(ON)

Change in R

0.75

%/

°CV

G

FS

Forward Transconductance

0.4

0.5

V

Input Capacitance

100

150

C

OSS

Common Source Output Capacitance

50

85

C

RSS

Reverse Transfer Capacitance

10

35

Turn-ON Delay Time

6

t

r

Rise Time

14

t

d(OFF)

Turn-OFF Delay Time

16

Fall Time

16

V

SD

Diode Forward Voltage Drop

0.8

1.8

V

V

t

rr

Reverse Recovery Time

300

ns

V

Notes:

1. All D.C. parameters 100% tested at 25

°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

A

Drain-to-Source

Breakdown Voltage

Static Drain-to-Source

ON-State Resistance

f = 1 MHz

pF

°C unless otherwise specified)

V

ns

I

R

Ω