IW4518BD datasheet(3/6 Pages) IKSEMICON

Part #	IW4518BD

Description	Dual Up-Counter High-Voltage Silicon-Gate CMOS

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Manufacturer	IKSEMICON [IK Semicon Co., Ltd]

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3 / 6 page

IW4518B

Rev. 00

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

VCC

Guaranteed Limit

Symbol

Parameter

Test Conditions

V

≥-55°C

25

°C

≤125

°C

Unit

VIH

Minimum High-Level

Input Voltage

VOUT= 0.5 V or VCC - 0.5V

VOUT= 1.0 V or VCC - 1.0 V

VOUT= 1.5 V or VCC - 1.5V

5.0

10

15

3.5

7

11

3.5

7

11

3.5

7

11

V

VIL

Maximum Low -

Level Input Voltage

VOUT= 0.5 V or VCC - 0.5V

VOUT= 1.0 V or VCC - 1.0 V

VOUT= 1.5 V or VCC - 1.5V

5.0

10

15

1.5

3

4

1.5

3

4

1.5

3

4

V

VOH

Minimum High-Level

Output Voltage

VIN=GND or VCC

5.0

10

15

4.95

9.95

14.95

4.95

9.95

14.95

4.95

9.95

14.95

V

VOL

Maximum Low-Level

Output Voltage

VIN=GND or VCC

5.0

10

15

0.05

V

IIN

Maximum Input

Leakage Current

VIN= GND or VCC

18

±0.1

±1.0

μA

ICC

Maximum Quiescent

Supply Current

(per Package)

VIN= GND or VCC

5.0

10

15

20

5

10

20

100

5

10

20

100

150

300

600

3000

μA

IOL

Minimum Output

Low (Sink) Current

VIN= GND or VCC

UOL=0.4 V

UOL=0.5 V

UOL=1.5 V

5.0

10

15

0.64

1.6

4.2

0.51

1.3

3.4

0.36

0.9

2.4

mA

IOH

Minimum Output

High (Source) Current

VIN= GND or VCC

UOH=2.5 V

UOH=4.6 V

UOH=9.5 V

UOH=13.5 V

5.0

10

15

-2

-0.64

-1.6

-4.2

-1.6

-0.51

-1.3

-3.4

-1.15

-0.36

-0.9

-2.4

mA

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