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Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

DN2535

DN2540

Advanced DMOS Technology

Not recommended for new designs. For products in TO-92

(N3) package and TO-243AA(N8) package, please use DN3535

or DN3545 instead.

These low threshold depletion-mode (normally-on) transistors

utilize an advanced vertical DMOS structure and Supertex’s

well-proven silicon-gate manufacturing process. This combina-

tion produces devices with the power handling capabilities of

bipolar transistors and with the high input impedance and posi-

tive temperature coefficient inherent in MOS devices. Character-

istic of all MOS structures, these devices are free from thermal

runaway and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Features

❏ High input impedance

❏ Low input capacitance

❏ Fast switching speeds

❏ Low on resistance

❏ Free from secondary breakdown

❏ Low input and output leakage

Applications

❏ Normally-on switches

❏ Solid state relays

❏ Converters

❏ Linear amplifiers

❏ Constant current sources

❏ Power supply circuits

❏ Telecom

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

± 20V

Operating and Storage Temperature

-55°C to +150°C

Soldering Temperature*

300°C

Note: See Package Outline section for dimensions.

Package Options

N-Channel Depletion-Mode

Vertical DMOS FETs

TO-92

S G D

TO-243AA

(SOT-89)

G

D

S

D

TO-220

TAB: DRAIN

G

D S

Product marking for TO-243AA:

DN5D

❋

Where

❋ = 2-week alpha date code

(max)

(min)

TO-92

TO-220

TO-243AA*

350V

25Ω

150mA

DN2535N3

DN2535N5

—

400V

25Ω

150mA

DN2540N3

DN2540N5

DN2540N8

Ordering Information

Order Number / Package