7-6

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

BV

DSS

Drain-to-Source Breakdown Voltage

60

V

I

V

GS(th)

Gate Threshold Voltage

0.8

3.0

V

V

I

GSS

Gate Body Leakage

10

nA

V

I

DSS

Zero Gate Voltage Drain Current

1

µAV

1mA

V

ON-State Drain Current

75

mA

Static Drain-to-Source ON-State Resistance

5.3

Static Drain-to-Source ON-State Resistance

5.0

Ω

Forward Transconductance

100

m

Input Capacitance

60

Common Source Output Capacitance

25

pF

Reverse Transfer Capacitance

5

Turn-ON Time

10

Turn-OFF Time

10

Diode Forward Voltage Drop

0.85

V

Notes:

1. All D.C. parameters 100% tested at 25

°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

2N7000

Thermal Characteristics

°C unless otherwise specified)

Ω

f = 1 MHz

ns

Switching Waveforms and Test Circuit

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

10V

V

DD

R

gen

0V

0V

Package

Power Dissipation

θ

jc

θ

ja

@ T

TO-92

200mA

500mA

1W

125

170

200mA

500mA