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HBAT-540C-TR1G Datasheet(PDF) 6 Page - AVAGO TECHNOLOGIES LIMITED |
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HBAT-540C-TR1G Datasheet(HTML) 6 Page - AVAGO TECHNOLOGIES LIMITED |
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6 / 8 page  6 Applications Information Schottky Diode Fundamentals The HBAT-540x series of clipping/clamping diodes are Schottky devices. A Schottky device is a rectifying, metal-semiconductorcontactformedbetweenametal andann-dopedorap-dopedsemiconductor.Whena metal-semiconductorjunctionisformed,freeelectrons flowacrossthejunctionfromthesemiconductorandfill thefree-energystatesinthemetal.Thisflowofelectrons createsadepletionorpotentialacrossthejunction.The differenceinenergylevelsbetweensemiconductorand metaliscalledaSchottkybarrier. P-doped, Schottky-barrier diodes excel at applications requiringultralowturn-onvoltage(suchaszero-biased RF detectors). But their very low, breakdown-voltage and high series-resistance make them unsuitable for the clipping and clamping applications involving high forward currents and high reverse voltages. Therefore, this discussion will focus entirely on n-doped Schottky diodes. Underaforwardbias(metalconnectedtopositiveinan n-dopedSchottky),orforwardvoltage,VF,therearemany electronswithenoughthermalenergytocrossthebarrier potentialintothemetal.Oncetheappliedbiasexceeds thebuilt-inpotentialofthejunction,theforwardcurrent, IF,willincreaserapidlyasVFincreases. WhentheSchottkydiodeisreversebiased,thepotential barrier for electrons becomes large; hence, there is a small probability that an electron will have suffi- cientthermalenergytocrossthejunction.Thereverse leakagecurrentwillbeinthenanoamperetomicroam- pererange,dependinguponthediodetype,thereverse voltage,andthetemperature. In contrast to a conventional p-n junction, current in the Schottky diode is carried only by majority carriers. Because no minority carrier charge storage effects are present, Schottky diodes have carrier lifetimes of less than 100ps and are extremely fast switching semi- conductors. Schottky diodes are used as rectifiers at frequenciesof50GHzandhigher. Another significant difference between Schottky and p-ndiodesistheforwardvoltagedrop.Schottkydiodes haveathresholdoftypically0.3Vincomparisontothat of0.6Vinp-njunctiondiodes.SeeFigure6. Figure 6. Throughthecarefulmanipulationofthediameterofthe Schottkycontactandthechoiceofmetaldepositedon then-dopedsilicon,theimportantcharacteristicsofthe diode (junction capacitance, CJ; parasitic series resis- tance,RS;breakdownvoltage,VBR;andforwardvoltage, VF,)canbeoptimizedforspecificapplications.TheHSMS- 70xseriesandHBAT-540xseriesofdiodesareacasein point. Both diodes have similar barrier heights; and this is indicated by corresponding values of saturation current,IS.Yet,differentcontactdiametersandepitaxial- layerthicknessresultinverydifferentvaluesofjunction capacitance,CJandRS.ThisisportrayedbytheirSPICE parametersinTable1. Table 1. HBAT-540x and HSMS-270x SPICE Parameters. Parameter HBAT-540x HSMS-270x BV 40V 5V CJ0 3.0pF 6.7pF EG 0.55eV 0.55eV IBV 10E-4A 10E-4A IS 1.0E-7A 1.4E-7A N 1.0 1.04 RS .4Ω 0.65Ω PB 0.6V 0.6V PT M 0.5 0.5 AtlowvaluesofIF≤1mA,theforwardvoltagesofthe twodiodesarenearlyidentical.However,ascurrentrises above 10mA, the lower series resistance of the HSMS- 70xallowsforamuchlowerforwardvoltage.Thisgives theHSMS-70xamuchhighercurrenthandlingcapabil- ity.Thetrade-offisahighervalueofjunctioncapacitance. Theforwardvoltageandcurrentplotsillustratethediffer- encesinthesetwoSchottkydiodes,asshowninFigure 7. P N CURRENT 0.6V + – BIAS VOLTAGE PN JUNCTION CAPACITANCE METAL N CURRENT 0.3V + – BIAS VOLTAGE SCHOTTKY JUNCTION CAPACITANCE |
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