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ATF-36163-TR2G Datasheet(PDF) 2 Page - AVAGO TECHNOLOGIES LIMITED

Part # ATF-36163-TR2G
Description  1.5-18 GHz Surface Mount Pseudomorphic HEMT
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Manufacturer  AVAGO [AVAGO TECHNOLOGIES LIMITED]
Direct Link  http://www.avagotech.com
Logo AVAGO - AVAGO TECHNOLOGIES LIMITED

ATF-36163-TR2G Datasheet(HTML) 2 Page - AVAGO TECHNOLOGIES LIMITED

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ATF-36163 Absolute Maximum Ratings[1]
Absolute
Symbol
Parameter
Units
Maximum
VDS
Drain - Source Voltage
V
+3
VGS
Gate - Source Voltage
V
-3
VGD
Gate Drain Voltage
V
-3.5
ID
Drain Current
mA
Idss
PT
Total Power Dissipation
mW
180
Pin max
RF Input Power
dBm
+10
TCH
Channel Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Thermal Resistance:
θch-c = 160°C/W
Note:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
ATF-36163 Typical Parameters TC = 25°C, ZO = 50 Ω, Vds = 2 V, Ids = 15 mA, (unless otherwise noted).
Symbol
Parameters and Test Conditions
Units
Typ.
Fmin
Minimum Noise Figure (Γsource = Γopt)
f = 4 GHz
dB
0.6
f = 12 GHz
dB
1.0
Ga
Associated Gain
f = 4 GHz
dB
15.8
f = 12 GHz
dB
9.4
Gmax
Maximum Available Gain[1]
f = 4 GHz
dB
17.2
f = 12 GHz
dB
10.9
P1dB
Output Power at 1 dB Gain Compression
f = 4 GHz
dBm
5
under the power matched condition
f = 12 GHz
dBm
5
VGS
Gate to Source Voltage for IDS = 15 mA
VDS = 2.0 V
V
-0.2
Note:
1. Gmax = MAG for K > 1 and Gmax = MSG for K ≤ 1, which is shown on the S-parameters tables.
ATF-36163 Electrical Specifications TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
NF
Noise Figure[1]
f =12.0 GHz
dB
1.2
1.4[1]
G
Gain at NF[1]
f = 12.0 GHz
dB
9
10
gm
Transconductance
VDS = 1.5 V, VGS = 0 V
mS
50
60
Idss
Saturated Drain Current
VDS = 1.5 V, VGS = 0 V
mA
15
25
40
Vp 10%
Pinchoff Voltage
VDS = 1.5 V, IDS = 10% of Idss
V
-1.0
-0.35
-0.15
BVGDO
Gate Drain Breakdown Voltage
IG = 30 µA
V
-3.5
Note:
1. Measured in a test circuit tuned for a typical device.


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