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ATF-521P8-TR1 Datasheet(PDF) 1 Page - AVAGO TECHNOLOGIES LIMITED |
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ATF-521P8-TR1 Datasheet(HTML) 1 Page - AVAGO TECHNOLOGIES LIMITED |
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1 / 23 page  ATF-521P8 High Linearity Enhancement Mode[1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package Data Sheet Description Avago Technologies’ ATF‑521P8 is a single‑voltage high linearity, low noise E‑pHEMT housed in an 8‑lead JEDEC‑ standard leadless plastic chip carrier (LPCC[3]) package. The device is ideal as a medium‑power, high‑linearity amplifier. Its operating frequency range is from 50 MHz to 6 GHz. The thermally efficient package measures only 2mm x 2mm x 0.75mm. Its backside metalization provides ex‑ cellent thermal dissipation as well as visual evidence of solder reflow. The device has a Point MTTF of over 300 years at a mounting temperature of +85°C. All devices are 100% RF & DC tested. Features • Single voltage operation • High linearity and P1dB • Low noise figure • Excellent uniformity in product specifications • Small package size: 2.0 x 2.0 x 0.75 mm3 • Point MTTF > 300 years[2] • MSL‑1 and lead‑free • Tape‑and‑reel packaging option available Pin Connections and Package Marking Note: Package marking provides orientation and identification “2P” = Device Code “x” = Month code indicates the month of manufacture. Note: 1. Enhancement mode technology employs a single positive V gs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data 3. Conform to JEDEC reference outline MO229 for DRP‑N 4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power. Pin 1 (Source) Pin 2 (Gate) Pin 3 Pin 4 (Source) Pin 8 Pin 7 (Drain) Pin 6 Pin 5 2Px Top View Pin 8 Pin 7 (Drain) Pin 6 Pin 5 Pin 1 (Source) Pin 2 (Gate) Pin 3 Pin 4 (Source) Bottom View Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 1C) Refer to Avago Technologies Application Note A004R: Electrostatic Discharge Damage and Control. Specifications • 2 GHz; 4.5V, 200 mA (Typ.) • 42 dBm output IP3 • 26.5 dBm output power at 1 dB gain compression • 1.5 dB noise figure • 17 dB Gain • 12.5 dB LFOM[4] Applications • Front‑end LNA Q2 and Q3, driver or pre‑driver amplifier for Cellular/PCS and WCDMA wireless infrastructure • Driver amplifier forWLAN,WLL/RLL and MMDS applica‑ tions • General purpose discrete E‑pHEMT for other high linear‑ ity applications |
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Similar Description - ATF-521P8-TR1 |
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