BUL128 datasheet(2/5 Pages) SUNTAC

Part #	BUL128

Description	High Voltage Fast-Switching NPN Power Transistor

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Manufacturer	SUNTAC [Suntac Electronic Corp.]

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

1.78

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = -1.5 V)

VCE = 700 V

Tj = 125

oC

100

500

µA

VEBO

Emitter-Base Voltage

(IC = 0)

IE = 10 mA

9

V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

L = 25 mH

400

V

ICEO

Collector Cut-Off

Current (IB = 0)

VCE = 400 V

250

µA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 0.5 A

IB = 0.1 A

IC = 1 A

IB = 0.2 A

IC = 2.5 A

IB = 0.5 A

IC = 4 A

IB = 1 A

0.5

0.7

1

1.5

V

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 0.5 A

IB = 0.1 A

IC = 1 A

IB = 0.2 A

IC = 2.5 A

IB = 0.5 A

1.1

1.2

1.3

V

hFE

∗

DC Current Gain

IC = 10 mA

VCE = 5 V

IC = 2 A

VCE = 5 V

Group A

Group B

10

14

25

28

40

ts

tf

RESISTIVE LOAD

Storage Time

Fall Time

VCC = 125 V

IC = 2 A

IB1 = 0.4 A

IB2 = -0.4 A

Tp = 30

µs

(see fig.2)

1.5

0.2

3

0.4

µs

ts

tf

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 2 A

IB1 = 0.4 A

VBE(off) = -5 V

RBB = 0

Ω

Vclamp = 200 V

(see fig.1)

0.6

0.1

1

0.2

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BUL128

2/5

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