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VNP14NV04 Datasheet(PDF) 4 Page - STMicroelectronics |
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VNP14NV04 Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 29 page  4/29 VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04 ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified) DYNAMIC SWITCHING SOURCE DRAIN DIODE PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified) (*) Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Symbol Parameter Test Conditions Min Typ Max Unit gfs (*) Forward Transconductance VDD=13V; ID=7A 18 S COSS Output Capacitance VDS=13V; f=1MHz; VIN=0V 400 pF Symbol Parameter Test Conditions Min Typ Max Unit td(on) Turn-on Delay Time VDD=15V; ID=7A Vgen=5V; Rgen=RIN MIN=10Ω (see figure 1) 80 250 ns tr Rise Time 350 1000 ns td(off) Turn-off Delay Time 450 1350 ns tf Fall Time 150 500 ns td(on) Turn-on Delay Time VDD=15V; ID=7A Vgen=5V; Rgen=2.2KΩ (see figure 1) 1.5 4.5 µs tr Rise Time 9.7 30.0 µs td(off) Turn-off Delay Time 9 25.0 µs tf Fall Time 10.2 30.0 µs (di/dt)on Turn-on Current Slope VDD=15V; ID=7A Vgen=5V; Rgen=RIN MIN=10Ω 16 A/ µs Qi Total Input Charge VDD=12V; ID =7A; VIN=5V; Igen=2.13mA (see figure 5) 36.8 nC Symbol Parameter Test Conditions Min Typ Max Unit VSD (*) Forward On Voltage ISD =7A; VIN=0V 0.8 V trr Reverse Recovery Time ISD=7A; di/dt=40A/µs VDD=30V; L=200µH (see test circuit, figure 2) 300 ns Qrr Reverse Recovery Charge 0.8 µC IRRM Reverse Recovery Current 5 A Symbol Parameter Test Conditions Min Typ Max Unit Ilim Drain Current Limit VIN=5V; VDS=13V 12 18 24 A tdlim Step Response Current Limit VIN=5V; VDS=13V 45 µs Tjsh Overtemperature Shutdown 150 175 200 °C Tjrs Overtemperature Reset 135 °C Igf Fault Sink Current VIN=5V; VDS=13V; Tj=Tjsh 10 15 20 mA Eas Single Pulse Avalanche Energy starting Tj=25°C; VDD =24V VIN= 5V; Rgen=RIN MIN=10Ω; L=24mH (see figures 3 & 4) 400 mJ 2 |
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Similar Description - VNP14NV04 |
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