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2SK1621S Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SK1621S Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 3 page Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ———————————————————————————————————————————– Drain to source breakdown V(BR)DSS 250 — — V ID = 10 mA, VGS = 0 voltage ——————————————————————————————————————————— Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 voltage ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 200 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static Drain to source on state RDS(on) — 0.40 0.55 Ω ID = 4 A, VGS = 10 V * resistance ——————————————————————————————————————————— Forward transfer admittance |yfs| 2.7 4.5 — S ID = 4 A, VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 820 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 370 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 115 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 12 — ns ID = 4 A, VGS = 10 V, ———————————————————————————————— Rise time tr — 48 — ns RL = 7.5 Ω ———————————————————————————————— Turn-off delay time td(off) —70 — ns ———————————————————————————————— Fall time tf —50 — ns ——————————————————————————————————————————— Body to drain diode forward VDF — 1.2 — V IF = 7 A, VGS = 0 voltage ——————————————————————————————————————————— Body to drain diode reverse trr — 400 — ns IF = 7 A, VGS = 0, recovery time diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SK741. 2SK1621 L , 2SK1621 S |
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