Electronic Components Datasheet Search |
|
ISL89412IBZ-T13 Datasheet(PDF) 8 Page - Intersil Corporation |
|
ISL89412IBZ-T13 Datasheet(HTML) 8 Page - Intersil Corporation |
8 / 10 page 8 FN6798.0 October 17, 2008 .subckt comp1 out inp inm vss e1 out vss table { (v(inp) v(inm))* 5000} (0,0) (3.2,3.2) Rout out vss 10meg Rinp inp vss 10meg Rinm inm vss 10meg .ends comp1 Application Guidelines It is important to minimize inductance to the power FET by keeping the output drive current loop as short as possible. Also, the decoupling capacitor, Cq, should be a high quality ceramic capacitor with a Q that should be a least 10x the gate Q of the power FET. A ground plane under this circuit is also recommended. In applications where it is difficult to place the driver very close to the power FET (which may result with excessive parasitic inductance), it then may be necessary to add an external gate resistor to dampen the inductive ring. If this resistor must be too large in value to be effective, then as an alternative, Schottky diodes can be added to clamp the ring voltage to V+ or GND. Where high supply voltage operation is required (15V to 18V), input signals with a minimum of 3.3V input drive is suggested and a minimum rise/fall time of 100ns. This is recommended to minimize the internal bias current power dissipation. Excessive power dissipation in the driver can result when driving highly capacitive FET gates at high frequencies. These gate power losses are defined by Equation 1: where: P = Power Qc = Charge of the Power FET at Vgs Vgs = Gate drive voltage (V+) fSW = switching Frequency Adding a gate resistor to the output of the driver will transfer some of the driver dissipation to the resistor. Another possible solution is to lower the gate driver voltage which also lowers Qc. FIGURE 14. RECOMMENDED LAYOUT METHODS GND V+ Cq LOOP AS SHORT AS POSSIBLE Cq SHOULD BE AS CLOSE AS POSSIBLE TO THE V+ AND GND PINS FIGURE 15. SUGGESTED CONFIGURATION FOR DRIVING INDUCTIVE LOADS GND V+ Cq PARASITIC LEAD INDUCTANCE P2 Q C V gs • • f SW • = (EQ. 1) ISL89410, ISL89411, ISL89412 |
Similar Part No. - ISL89412IBZ-T13 |
|
Similar Description - ISL89412IBZ-T13 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |